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Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations

dc.contributor.authorNazir, Aftab
dc.contributor.authorEyben, Pierre
dc.contributor.authorClarysse, Trudo
dc.contributor.authorHellings, Geert
dc.contributor.authorSchulze, Andreas
dc.contributor.authorMody, Jay
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-20T13:49:34Z
dc.date.available2021-10-20T13:49:34Z
dc.date.issued2012
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21191
dc.sourceIIOimport
dc.titleUnderstanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations
dc.typeJournal article
dc.contributor.imecauthorNazir, Aftab
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.source.peerreviewyes
dc.source.beginpage38
dc.source.endpage42
dc.source.journalSolid-State Electronics
dc.source.volume74
imec.availabilityPublished - imec
imec.internalnotesSelected papers ESSDERC 2011


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