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Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

dc.contributor.authorPham, Anton
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.contributor.authorJungemann, Christoph
dc.contributor.authorMeinerzhagen, Bernd
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-20T14:32:25Z
dc.date.available2021-10-20T14:32:25Z
dc.date.issued2012
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21296
dc.sourceIIOimport
dc.titleQuantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
dc.typeJournal article
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewyes
dc.source.beginpage30
dc.source.endpage36
dc.source.journalSolid-State Electronics
dc.source.volume71
imec.availabilityPublished - imec


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