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Organic thin-film transistors with anodized gate dielectric patterned by self-aligned embossing on flexible substrates

dc.contributor.authorQin, Yiheng
dc.contributor.authorTurkenburg, Daniël H.
dc.contributor.authorBarbu, Ionut
dc.contributor.authorSmaal, Wiljan T.T.
dc.contributor.authorMyny, Kris
dc.contributor.authorLin, Wan-Yu
dc.contributor.authorGelinck, Gerwin
dc.contributor.authorHeremans, Paul
dc.contributor.authorLiu, Johan
dc.contributor.authorMeinders, Erwin R.
dc.date.accessioned2021-10-20T14:58:52Z
dc.date.available2021-10-20T14:58:52Z
dc.date.issued2012
dc.identifier.issn1616-301X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21359
dc.sourceIIOimport
dc.titleOrganic thin-film transistors with anodized gate dielectric patterned by self-aligned embossing on flexible substrates
dc.typeJournal article
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1209
dc.source.endpage1214
dc.source.journalAdvanced Functional Materials
dc.source.issue6
dc.source.volume22
imec.availabilityPublished - open access


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