Show simple item record

High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition

dc.contributor.authorRamesh, Anisha
dc.contributor.authorBerger, Paul
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-20T15:06:17Z
dc.date.available2021-10-20T15:06:17Z
dc.date.issued2012-02
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21376
dc.sourceIIOimport
dc.titleHigh 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage92104
dc.source.journalApplied Physics Letters
dc.source.issue9
dc.source.volume100
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record