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dc.contributor.authorScarrozza, Marco
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHoussa, Michel
dc.contributor.authorHeyns, Marc
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-20T15:46:50Z
dc.date.available2021-10-20T15:46:50Z
dc.date.issued2012
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21464
dc.sourceIIOimport
dc.titleOxidation of the GaAs(001) surface: Insights from first-principles calculations
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewyes
dc.source.beginpage195307
dc.source.journalPhysical Review B
dc.source.issue19
dc.source.volume85
imec.availabilityPublished - imec


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