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Surface-charge-collection-enhanced high-sensitivity silicon photodiodes for DUV and VUV spectral ranges

dc.contributor.authorShi, Lei
dc.contributor.authorNihthianov, Stoyan
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorScholze, Frank
dc.contributor.authorGottwald, Alexander
dc.contributor.authorNanver, Liz K
dc.date.accessioned2021-10-20T16:03:22Z
dc.date.available2021-10-20T16:03:22Z
dc.date.issued2012
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21500
dc.sourceIIOimport
dc.titleSurface-charge-collection-enhanced high-sensitivity silicon photodiodes for DUV and VUV spectral ranges
dc.typeJournal article
dc.contributor.imecauthorHaspeslagh, Luc
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2888
dc.source.endpage2894
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume59
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6280660
imec.availabilityPublished - open access


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