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In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

dc.contributor.authorShimura, Y.
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorNakatsuka, O.
dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorJensen, A.
dc.contributor.authorPetersen, D. H.
dc.contributor.authorZaima, S.
dc.date.accessioned2021-10-20T16:04:26Z
dc.date.available2021-10-20T16:04:26Z
dc.date.issued2012
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21502
dc.sourceIIOimport
dc.titleIn-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates
dc.typeJournal article
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3206
dc.source.endpage3210
dc.source.journalThin Solid Films
dc.source.issue8
dc.source.volume520
imec.availabilityPublished - open access
imec.internalnotesICSI-7 paper


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