Free electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong plasmon-phonon coupling regime
dc.contributor.author | Shkerdin, Gennady | |
dc.contributor.author | Rabbaa, Sulaiman | |
dc.contributor.author | Stiens, Johan | |
dc.contributor.author | Vounckx, Roger | |
dc.date.accessioned | 2021-10-20T16:05:52Z | |
dc.date.available | 2021-10-20T16:05:52Z | |
dc.date.issued | 2012 | |
dc.identifier.issn | 0022-3727 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/21505 | |
dc.source | IIOimport | |
dc.title | Free electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong plasmon-phonon coupling regime | |
dc.type | Journal article | |
dc.contributor.imecauthor | Stiens, Johan | |
dc.contributor.imecauthor | Vounckx, Roger | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 495103 | |
dc.source.journal | Journal of Physics D: Applied Physics | |
dc.source.issue | 49 | |
dc.source.volume | 45 | |
imec.availability | Published - open access |