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Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1xGex/SiO2 heterostructures

dc.contributor.authorSomers, P.
dc.contributor.authorStesmans, Andre
dc.contributor.authorSouriau, Laurent
dc.contributor.authorAfanas'ev, Valeri V.
dc.date.accessioned2021-10-20T16:16:29Z
dc.date.available2021-10-20T16:16:29Z
dc.date.issued2012
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21527
dc.sourceIIOimport
dc.titleElectron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1xGex/SiO2 heterostructures
dc.typeJournal article
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.source.peerreviewyes
dc.source.beginpage74501
dc.source.journalJournal of Applied Physics
dc.source.issue7
dc.source.volume112
imec.availabilityPublished - imec


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