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AC transconductance dispersion (ACGD): a method to profile oxide traps in MOSFETs without body contact

dc.contributor.authorSun, Xiao
dc.contributor.authorCui, Sharon
dc.contributor.authorAlian, AliReza
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMerckling, Clement
dc.contributor.authorLin, Dennis
dc.contributor.authorMa, T.P.
dc.date.accessioned2021-10-20T16:36:58Z
dc.date.available2021-10-20T16:36:58Z
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21571
dc.sourceIIOimport
dc.titleAC transconductance dispersion (ACGD): a method to profile oxide traps in MOSFETs without body contact
dc.typeJournal article
dc.contributor.imecauthorSun, Xiao
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorLin, Dennis
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage438
dc.source.endpage440
dc.source.journalIEEE Electron Device Letters
dc.source.issue3
dc.source.volume33
imec.availabilityPublished - open access


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