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High-field transport investigation for 25-nm MOSFETs with 0.64nm EOT: intrinsic performance and parasitic effects

dc.contributor.authorTrojman, Lionel
dc.contributor.authorPantisano, Luigi
dc.contributor.authorRagnarsson, Lars-Ake
dc.date.accessioned2021-10-20T17:09:34Z
dc.date.available2021-10-20T17:09:34Z
dc.date.issued2012
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21636
dc.sourceIIOimport
dc.titleHigh-field transport investigation for 25-nm MOSFETs with 0.64nm EOT: intrinsic performance and parasitic effects
dc.typeJournal article
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1856
dc.source.endpage1862
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue7
dc.source.volume59
imec.availabilityPublished - open access


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