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dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorSteudel, Soeren
dc.contributor.authorMyny, Kris
dc.contributor.authorNag, Manoj
dc.contributor.authorKe, Tung Huei
dc.contributor.authorSchols, Sarah
dc.contributor.authorGenoe, Jan
dc.contributor.authorGielen, Georges
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-20T17:25:13Z
dc.date.available2021-10-20T17:25:13Z
dc.date.issued2012
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21667
dc.sourceIIOimport
dc.titleHigh-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal
dc.typeJournal article
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorKe, Tung Huei
dc.contributor.imecauthorSchols, Sarah
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorGielen, Georges
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecKe, Tung Huei::0000-0001-8381-4998
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage113505
dc.source.journalApplied Physics Letters
dc.source.issue11
dc.source.volume101
dc.identifier.urlhttp://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000101000011113505000001&idtype=cvips&doi=10.1063/1.
imec.availabilityPublished - open access


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