dc.contributor.author | Vaisman Chasin, Adrian | |
dc.contributor.author | Steudel, Soeren | |
dc.contributor.author | Myny, Kris | |
dc.contributor.author | Nag, Manoj | |
dc.contributor.author | Ke, Tung Huei | |
dc.contributor.author | Schols, Sarah | |
dc.contributor.author | Genoe, Jan | |
dc.contributor.author | Gielen, Georges | |
dc.contributor.author | Heremans, Paul | |
dc.date.accessioned | 2021-10-20T17:25:13Z | |
dc.date.available | 2021-10-20T17:25:13Z | |
dc.date.issued | 2012 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/21667 | |
dc.source | IIOimport | |
dc.title | High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal | |
dc.type | Journal article | |
dc.contributor.imecauthor | Vaisman Chasin, Adrian | |
dc.contributor.imecauthor | Myny, Kris | |
dc.contributor.imecauthor | Nag, Manoj | |
dc.contributor.imecauthor | Ke, Tung Huei | |
dc.contributor.imecauthor | Schols, Sarah | |
dc.contributor.imecauthor | Genoe, Jan | |
dc.contributor.imecauthor | Gielen, Georges | |
dc.contributor.imecauthor | Heremans, Paul | |
dc.contributor.orcidimec | Vaisman Chasin, Adrian::0000-0002-9940-0260 | |
dc.contributor.orcidimec | Myny, Kris::0000-0002-5230-495X | |
dc.contributor.orcidimec | Ke, Tung Huei::0000-0001-8381-4998 | |
dc.contributor.orcidimec | Genoe, Jan::0000-0002-4019-5979 | |
dc.contributor.orcidimec | Heremans, Paul::0000-0003-2151-1718 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 113505 | |
dc.source.journal | Applied Physics Letters | |
dc.source.issue | 11 | |
dc.source.volume | 101 | |
dc.identifier.url | http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000101000011113505000001&idtype=cvips&doi=10.1063/1. | |
imec.availability | Published - open access | |