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CMOS-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon substrate

dc.contributor.authorVan Hove, Marleen
dc.contributor.authorBoulay, Sanae
dc.contributor.authorBahl, Sandeep
dc.contributor.authorStoffels, Steve
dc.contributor.authorKang, Xuanwu
dc.contributor.authorWellekens, Dirk
dc.contributor.authorGeens, Karen
dc.contributor.authorDelabie, Annelies
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-20T17:45:08Z
dc.date.available2021-10-20T17:45:08Z
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21708
dc.sourceIIOimport
dc.titleCMOS-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon substrate
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage667
dc.source.endpage669
dc.source.journalIEEE Electron Device Letters
dc.source.issue5
dc.source.volume33
imec.availabilityPublished - imec


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