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A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors

dc.contributor.authorVandenberghe, William
dc.contributor.authorVerhulst, Anne
dc.contributor.authorKao, Frank
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T17:58:51Z
dc.date.available2021-10-20T17:58:51Z
dc.date.issued2012
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21734
dc.sourceIIOimport
dc.titleA model determining optimal doping concentration and material's band gap of tunnel field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorKao, Frank
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewyes
dc.source.beginpage193509
dc.source.journalApplied Physics Letters
dc.source.issue19
dc.source.volume100
imec.availabilityPublished - imec


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