dc.contributor.author | Vandooren, Anne | |
dc.contributor.author | Leonelli, Daniele | |
dc.contributor.author | Rooyackers, Rita | |
dc.contributor.author | Arstila, Kai | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Huyghebaert, Cedric | |
dc.date.accessioned | 2021-10-20T18:04:16Z | |
dc.date.available | 2021-10-20T18:04:16Z | |
dc.date.issued | 2012 | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/21746 | |
dc.source | IIOimport | |
dc.title | Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Vandooren, Anne | |
dc.contributor.imecauthor | Leonelli, Daniele | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.imecauthor | Huyghebaert, Cedric | |
dc.contributor.orcidimec | Vandooren, Anne::0000-0002-2412-0176 | |
dc.contributor.orcidimec | Huyghebaert, Cedric::0000-0001-6043-7130 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 82 | |
dc.source.endpage | 87 | |
dc.source.journal | Solid-State Electronics | |
dc.source.volume | 72 | |
imec.availability | Published - imec | |