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A new route for fabricating strained Ge-based pMOSFETs

dc.contributor.authorVincent, Benjamin
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-20T18:36:04Z
dc.date.available2021-10-20T18:36:04Z
dc.date.issued2012-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21805
dc.sourceIIOimport
dc.titleA new route for fabricating strained Ge-based pMOSFETs
dc.typeJournal article
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage40
dc.source.endpage42
dc.source.journalChip Design Magazine
dc.source.issueWinter
dc.identifier.urlhttp://chipdesignmag.com/display.php?articleId=5082&issueId=46
imec.availabilityPublished - imec


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