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Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures

dc.contributor.authorZhang, Liyang
dc.contributor.authorCheng, Kai
dc.contributor.authorLiang, Hu
dc.contributor.authorLieten, Ruben
dc.contributor.authorLeys, Maarten
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-20T19:36:45Z
dc.date.available2021-10-20T19:36:45Z
dc.date.issued2012
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21921
dc.sourceIIOimport
dc.titlePhotoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures
dc.typeJournal article
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage30207
dc.source.journalJapanese Journal of Applied Physics
dc.source.issue3
dc.source.volume51
imec.availabilityPublished - open access


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