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Theory and experiments of the impact of work function variability on threshold voltage variability in MOS devices

dc.contributor.authorZhang, Xiao
dc.contributor.authorMitard, Jerome
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDeal, Michael
dc.contributor.authorGrubbs, M.E.
dc.contributor.authorLi, Jing
dc.contributor.authorMagyari-Kope, B.
dc.contributor.authorClemens, Bruce
dc.contributor.authorNishi, Yoshio
dc.date.accessioned2021-10-20T19:39:20Z
dc.date.available2021-10-20T19:39:20Z
dc.date.issued2012
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21926
dc.sourceIIOimport
dc.titleTheory and experiments of the impact of work function variability on threshold voltage variability in MOS devices
dc.typeJournal article
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewyes
dc.source.beginpage3124
dc.source.endpage3126
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume59
imec.availabilityPublished - imec


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