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dc.contributor.authorChen, Yangyin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorClima, Sergiu
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorFantini, Andrea
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-21T06:56:13Z
dc.date.available2021-10-21T06:56:13Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22129
dc.sourceIIOimport
dc.titleEndurance/retention trade-off on HfO2 / metal cap 1T1R bipolar RRAM
dc.typeJournal article
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1114
dc.source.endpage1121
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue3
dc.source.volume60
imec.availabilityPublished - open access
imec.internalnotes


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