dc.contributor.author | Chen, Yangyin | |
dc.contributor.author | Goux, Ludovic | |
dc.contributor.author | Clima, Sergiu | |
dc.contributor.author | Govoreanu, Bogdan | |
dc.contributor.author | Degraeve, Robin | |
dc.contributor.author | Kar, Gouri Sankar | |
dc.contributor.author | Fantini, Andrea | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Wouters, Dirk | |
dc.contributor.author | Jurczak, Gosia | |
dc.date.accessioned | 2021-10-21T06:56:13Z | |
dc.date.available | 2021-10-21T06:56:13Z | |
dc.date.issued | 2013 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/22129 | |
dc.source | IIOimport | |
dc.title | Endurance/retention trade-off on HfO2 / metal cap 1T1R bipolar RRAM | |
dc.type | Journal article | |
dc.contributor.imecauthor | Chen, Yangyin | |
dc.contributor.imecauthor | Goux, Ludovic | |
dc.contributor.imecauthor | Clima, Sergiu | |
dc.contributor.imecauthor | Govoreanu, Bogdan | |
dc.contributor.imecauthor | Degraeve, Robin | |
dc.contributor.imecauthor | Kar, Gouri Sankar | |
dc.contributor.imecauthor | Fantini, Andrea | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.imecauthor | Jurczak, Gosia | |
dc.contributor.orcidimec | Goux, Ludovic::0000-0002-1276-2278 | |
dc.contributor.orcidimec | Clima, Sergiu::0000-0002-4044-9975 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 1114 | |
dc.source.endpage | 1121 | |
dc.source.journal | IEEE Transactions on Electron Devices | |
dc.source.issue | 3 | |
dc.source.volume | 60 | |
imec.availability | Published - open access | |
imec.internalnotes | | |