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Improved NBTI reliability with sub 1-nanometer EOT ZrO2 compared to HfO2 gate dielectric

dc.contributor.authorCho, Moon Ju
dc.contributor.authorKaczer, Ben
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-21T06:58:31Z
dc.date.available2021-10-21T06:58:31Z
dc.date.issued2013
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22145
dc.sourceIIOimport
dc.titleImproved NBTI reliability with sub 1-nanometer EOT ZrO2 compared to HfO2 gate dielectric
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage593
dc.source.endpage595
dc.source.journalIEEE Electron Device Letters
dc.source.issue5
dc.source.volume34
imec.availabilityPublished - open access


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