dc.contributor.author | Cho, Moon Ju | |
dc.contributor.author | Kaczer, Ben | |
dc.contributor.author | Kauerauf, Thomas | |
dc.contributor.author | Ragnarsson, Lars-Ake | |
dc.contributor.author | Groeseneken, Guido | |
dc.date.accessioned | 2021-10-21T06:58:31Z | |
dc.date.available | 2021-10-21T06:58:31Z | |
dc.date.issued | 2013 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/22145 | |
dc.source | IIOimport | |
dc.title | Improved NBTI reliability with sub 1-nanometer EOT ZrO2 compared to HfO2 gate dielectric | |
dc.type | Journal article | |
dc.contributor.imecauthor | Kaczer, Ben | |
dc.contributor.imecauthor | Ragnarsson, Lars-Ake | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
dc.contributor.orcidimec | Ragnarsson, Lars-Ake::0000-0003-1057-8140 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 593 | |
dc.source.endpage | 595 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 5 | |
dc.source.volume | 34 | |
imec.availability | Published - open access | |