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MOVPE growth optimization of high quality InGaN films

dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorConsidine, L.
dc.contributor.authorTrush, E. J.
dc.contributor.authorCrawley, J. A.
dc.date.accessioned2021-09-30T09:48:14Z
dc.date.available2021-09-30T09:48:14Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2224
dc.sourceIIOimport
dc.titleMOVPE growth optimization of high quality InGaN films
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2
dc.source.endpage16
dc.source.journalMRS Internet Journal of Nitride Semiconductor Research
dc.source.volume2
imec.availabilityPublished - open access
imec.internalnoteshttp://nsr.mij.mrs.org/2/16/complete.html 2nd European GaN Workshop (EGW-2). 11-13 June 1997. Valbonne, France.


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