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Study of GaN and InGaN films grown by metalorganic chemical vapour deposition

dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorCrawley, J. A.
dc.contributor.authorThrush, E. J.
dc.date.accessioned2021-09-30T09:48:26Z
dc.date.available2021-09-30T09:48:26Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2225
dc.sourceIIOimport
dc.titleStudy of GaN and InGaN films grown by metalorganic chemical vapour deposition
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage344
dc.source.endpage348
dc.source.journalJournal of Crystal Growth
dc.source.issue1_4
dc.source.volume170
imec.availabilityPublished - open access
imec.internalnotes8th International Conference on Metalorganic Vapour Phase Epitaxy. 9-13 June 1996; Cardiff, UK


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