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Reliability of high mobility (si)Ge channel pMOSFETs for future CMOS applications: toward reliable ultra-thin EOT nanoscale transistors

dc.contributor.authorFranco, Jacopo
dc.date.accessioned2021-10-21T07:40:23Z
dc.date.available2021-10-21T07:40:23Z
dc.date.issued2013-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22357
dc.sourceIIOimport
dc.titleReliability of high mobility (si)Ge channel pMOSFETs for future CMOS applications: toward reliable ultra-thin EOT nanoscale transistors
dc.typePHD thesis
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.contributor.thesisadvisorGroeseneken, Guido
dc.contributor.thesisadvisorHeyns, Marc
imec.availabilityPublished - open access


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