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NBTI reliability of SiGe and Ge channel pMOSFETs with SiO2/HfO2 dielectric stack

dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorMitard, Jerome
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorRoussel, Philippe
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-21T07:40:39Z
dc.date.available2021-10-21T07:40:39Z
dc.date.issued2013
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22358
dc.sourceIIOimport
dc.titleNBTI reliability of SiGe and Ge channel pMOSFETs with SiO2/HfO2 dielectric stack
dc.typeJournal article
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage497
dc.source.endpage506
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue4
dc.source.volume13
dc.identifier.urlhttp://dx.doi.org/10.1109/TDMR.2013.2281731
imec.availabilityPublished - open access


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