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Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

dc.contributor.authorGeorge, John P.
dc.contributor.authorBeeckman, Jeroen
dc.contributor.authorWoestenborghs, Wouter
dc.contributor.authorSmet, Philippe F.
dc.contributor.authorBogaerts, Wim
dc.contributor.authorNeyts, Kristiaan
dc.date.accessioned2021-10-21T07:49:26Z
dc.date.available2021-10-21T07:49:26Z
dc.date.issued2013
dc.identifier.issn1931-7573
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22391
dc.sourceIIOimport
dc.titlePreferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers
dc.typeJournal article
dc.contributor.imecauthorBogaerts, Wim
dc.contributor.orcidimecBogaerts, Wim::0000-0003-1112-8950
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage7
dc.source.journalNanoscale Research Letters
dc.source.volume8
imec.availabilityPublished - imec


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