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On the complementary role of the field and temperature in triggering the on/off switching mechanisms in Hf/HfO2-x resistive RAM cells

dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorClima, Sergiu
dc.contributor.authorRadu, Iuliana
dc.contributor.authorChen, Yangyin
dc.contributor.authorWouters, Dirk
dc.contributor.authorAltimime, Laith
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-21T07:58:33Z
dc.date.available2021-10-21T07:58:33Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22424
dc.sourceIIOimport
dc.titleOn the complementary role of the field and temperature in triggering the on/off switching mechanisms in Hf/HfO2-x resistive RAM cells
dc.typeJournal article
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.source.peerreviewyes
dc.source.beginpage2471
dc.source.endpage2478
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue8
dc.source.volume60
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6542711&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A6564
imec.availabilityPublished - imec


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