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AlGaN/GaN field effect transistors for power electronics – Effect of finite GaN layer thickness on thermal characteristics

dc.contributor.authorHodges, Chris
dc.contributor.authorAnaya Calvo, J.
dc.contributor.authorStoffels, Steve
dc.contributor.authorMarcon, Denis
dc.contributor.authorKubal, Martin
dc.date.accessioned2021-10-21T08:18:13Z
dc.date.available2021-10-21T08:18:13Z
dc.date.issued2013-11
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22494
dc.sourceIIOimport
dc.titleAlGaN/GaN field effect transistors for power electronics – Effect of finite GaN layer thickness on thermal characteristics
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorMarcon, Denis
dc.source.peerreviewyes
dc.source.beginpage202108
dc.source.journalApplied Physics Letters
dc.source.issue20
dc.source.volume103
imec.availabilityPublished - imec


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