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Compact modeling of double and tri-gate MOSFETs

dc.contributor.authorIniguez, Benjamin
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorLime, Francois
dc.date.accessioned2021-10-21T08:26:37Z
dc.date.available2021-10-21T08:26:37Z
dc.date.issued2013
dc.identifier.issn0129-1564
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22523
dc.sourceIIOimport
dc.titleCompact modeling of double and tri-gate MOSFETs
dc.typeJournal article
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.source.peerreviewyes
dc.source.beginpage1350004
dc.source.journalInternational Journal of High Speed Electronics and Systems
dc.source.issue1
dc.source.volume22
dc.identifier.urlhttp://www.worldscientific.com/doi/abs/10.1142/S0129156413500043
imec.availabilityPublished - imec


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