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Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation

dc.contributor.authorIoannou-Sougleridis, Vassilios
dc.contributor.authorPoulakis, Nikolaos
dc.contributor.authorDimitrakis, Panagiotis
dc.contributor.authorNormand, Pascal
dc.contributor.authorPatsis, George
dc.contributor.authorDimoulas, Athanasios
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-21T08:27:14Z
dc.date.available2021-10-21T08:27:14Z
dc.date.issued2013
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22525
dc.sourceIIOimport
dc.titleRoom temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage19
dc.source.endpage26
dc.source.journalSolid-State Electronics
dc.source.volume81
imec.availabilityPublished - imec


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