Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodes

dc.contributor.author	Vandamme, Lorenz
dc.contributor.author	Vandamme, Ewout
dc.contributor.author	Dobbelsteen, J. J.
dc.date.accessioned	2021-09-30T09:56:31Z
dc.date.available	2021-09-30T09:56:31Z
dc.date.issued	1997
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/2262
dc.source	IIOimport
dc.title	Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodes
dc.type	Journal article
dc.date.embargo	9999-12-31
dc.source.peerreview	no
dc.source.beginpage	901
dc.source.endpage	908
dc.source.journal	Solid-State Electronics
dc.source.issue	6
dc.source.volume	41
imec.availability	Published - open access