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Au-free AlGaN/GaN power diode on 8 in Si substrate with gated edge termination

dc.contributor.authorLenci, Silvia
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorCarbonell, Laure
dc.contributor.authorHu, Jie
dc.contributor.authorMannaert, Geert
dc.contributor.authorWellekens, Dirk
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-21T09:12:36Z
dc.date.available2021-10-21T09:12:36Z
dc.date.issued2013
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22664
dc.sourceIIOimport
dc.titleAu-free AlGaN/GaN power diode on 8 in Si substrate with gated edge termination
dc.typeJournal article
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage1035
dc.source.endpage1037
dc.source.journalIEEE Electron Device Letters
dc.source.issue8
dc.source.volume34
imec.availabilityPublished - imec


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