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Tensile-strained GeSn metal-oxide-semiconductor field-effect transistor devices on Si(111) using solid phase epitaxy

dc.contributor.authorLieten, Ruben
dc.contributor.authorMaeda, Tatsuro
dc.contributor.authorJevasuwan, Wipakorn
dc.contributor.authorHattori, Hiroyuki
dc.contributor.authorUchida, Noriyuki
dc.contributor.authorMiura, Shu
dc.contributor.authorTanaka, Masatoshi
dc.contributor.authorLocquet, Jean-Pierre
dc.date.accessioned2021-10-21T09:24:19Z
dc.date.available2021-10-21T09:24:19Z
dc.date.issued2013
dc.identifier.issn1882-0778
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22697
dc.sourceIIOimport
dc.titleTensile-strained GeSn metal-oxide-semiconductor field-effect transistor devices on Si(111) using solid phase epitaxy
dc.typeJournal article
dc.contributor.imecauthorLieten, Ruben
dc.source.peerreviewyes
dc.source.beginpage101301
dc.source.journalApplied Physics Express
dc.source.issue10
dc.source.volume6
dc.identifier.urlhttp://apex.jsap.jp/link?APEX/6/101301/
imec.availabilityPublished - imec


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