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Tensile strained GeSn on Si by solid phase epitaxy

dc.contributor.authorLieten, Ruben
dc.contributor.authorSeo, J.W.
dc.contributor.authorDecoster, Stefan
dc.contributor.authorVantomme, Andre
dc.contributor.authorPeters, Sven
dc.contributor.authorBustillo, Karen C.
dc.contributor.authorHaller, Eugene E.
dc.contributor.authorMenghini, Mariela
dc.contributor.authorLocquet, Jean-Pierre
dc.date.accessioned2021-10-21T09:25:06Z
dc.date.available2021-10-21T09:25:06Z
dc.date.issued2013-02
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22699
dc.sourceIIOimport
dc.titleTensile strained GeSn on Si by solid phase epitaxy
dc.typeJournal article
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorDecoster, Stefan
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecDecoster, Stefan::0000-0003-1162-9288
dc.source.peerreviewyes
dc.source.beginpage52106
dc.source.journalApplied Physics Letters
dc.source.issue5
dc.source.volume102
dc.identifier.urlhttp://link.aip.org/link/doi/10.1063/1.4790302
imec.availabilityPublished - imec


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