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DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory

dc.contributor.authorMaccaronio, A.
dc.contributor.authorCrupi, F.
dc.contributor.authorProcel, L.M.
dc.contributor.authorGoux, Ludovic
dc.contributor.authorSimoen, Eddy
dc.contributor.authorTrojman, L.
dc.contributor.authorMiranda, E.
dc.date.accessioned2021-10-21T09:38:33Z
dc.date.available2021-10-21T09:38:33Z
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22737
dc.sourceIIOimport
dc.titleDC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory
dc.typeJournal article
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage5
dc.source.journalMicroelectronic Engineering
dc.source.volume107
imec.availabilityPublished - imec


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