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Modeling the impact of reset depth on vacancy-induced filament perturbations in HfO2 RRAM

dc.contributor.authorRaghavan, Naga
dc.contributor.authorDegraeve, Robin
dc.contributor.authorFantini, Andrea
dc.contributor.authorGoux, Ludovic
dc.contributor.authorWouters, Dirk
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-21T11:13:03Z
dc.date.available2021-10-21T11:13:03Z
dc.date.issued2013
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22971
dc.sourceIIOimport
dc.titleModeling the impact of reset depth on vacancy-induced filament perturbations in HfO2 RRAM
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage614
dc.source.endpage616
dc.source.journalIEEE Electron Device Letters
dc.source.issue5
dc.source.volume34
imec.availabilityPublished - open access


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