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Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma: Modeling and experimental investigation

dc.contributor.authorSamara, Vladimir
dc.contributor.authorVan Laer, Koen
dc.contributor.authorTinck, Stefan
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorBogaerts, Annemie
dc.date.accessioned2021-10-21T11:41:24Z
dc.date.available2021-10-21T11:41:24Z
dc.date.issued2013
dc.identifier.issn0963-0252
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23034
dc.sourceIIOimport
dc.titleEtching of low-k materials for microelectronics applications by means of a N2/H2 plasma: Modeling and experimental investigation
dc.typeJournal article
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.source.peerreviewyes
dc.source.beginpage25011
dc.source.journalPlasma Sources Science and Technology
dc.source.issue2
dc.source.volume22
dc.identifier.urlhttp://iopscience.iop.org/0963-0252/22/2/025011/
imec.availabilityPublished - imec


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