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Diameter-dependent boron diffusion in silicon nanowire-based transistors

dc.contributor.authorSchulze, Andreas
dc.contributor.authorFlorakis, Antonios
dc.contributor.authorHantschel, Thomas
dc.contributor.authorEyben, Pierre
dc.contributor.authorVerhulst, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-21T11:52:07Z
dc.date.available2021-10-21T11:52:07Z
dc.date.issued2013
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23058
dc.sourceIIOimport
dc.titleDiameter-dependent boron diffusion in silicon nanowire-based transistors
dc.typeJournal article
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage52108
dc.source.journalApplied Physics Letters
dc.source.issue5
dc.source.volume102
imec.availabilityPublished - open access


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