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Low-frequency noise studies on fully depleted UTBOX silicon-on-insulator nMOSFETs: challenges and opportunities

dc.contributor.authorSimoen, Eddy
dc.contributor.authorAoulaiche, Marc
dc.contributor.authordos Santos, Sara
dc.contributor.authorMartino, Joao
dc.contributor.authorStrobel, Vincent
dc.contributor.authorCretu, Bogdan
dc.contributor.authorRoutoure, J.M.
dc.contributor.authorCarin, Regis
dc.contributor.authorLuque Rodriguez, Abraham
dc.contributor.authorJimenez Tejada, Juan Antonio
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-21T12:04:50Z
dc.date.available2021-10-21T12:04:50Z
dc.date.issued2013
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23085
dc.sourceIIOimport
dc.titleLow-frequency noise studies on fully depleted UTBOX silicon-on-insulator nMOSFETs: challenges and opportunities
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageQ205
dc.source.endpageQ210
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue11
dc.source.volume2
dc.identifier.urlhttp://jss.ecsdl.org/content/2/11/Q205.abstract
imec.availabilityPublished - open access


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