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On the oxide trap density and profiles of 1-nm EOT metal-gate last CMOS transistors assessed by low-frequency noise

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorHiguchi, Yuichi
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-21T12:07:45Z
dc.date.available2021-10-21T12:07:45Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23091
dc.sourceIIOimport
dc.titleOn the oxide trap density and profiles of 1-nm EOT metal-gate last CMOS transistors assessed by low-frequency noise
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage3849
dc.source.endpage3855
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume60
imec.availabilityPublished - imec


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