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Photoluminescence determination of the Fermi energy in heavily doped strained Si1-xGex layers

dc.contributor.authorLibezny, Milan
dc.contributor.authorJain, Suresh
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.contributor.authorNijs, Johan
dc.contributor.authorMertens, Robert
dc.contributor.authorWerner, K.
dc.contributor.authorBalk, P.
dc.date.accessioned2021-09-29T12:43:10Z
dc.date.available2021-09-29T12:43:10Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/232
dc.sourceIIOimport
dc.titlePhotoluminescence determination of the Fermi energy in heavily doped strained Si1-xGex layers
dc.typeJournal article
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage1953
dc.source.endpage1955
dc.source.journalApplied Physics Letters
dc.source.volume64
imec.availabilityPublished - imec


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