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Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors

dc.contributor.authorVerreck, Devin
dc.contributor.authorVerhulst, Anne
dc.contributor.authorKao, Frank
dc.contributor.authorVandenberghe, William
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-21T14:11:35Z
dc.date.available2021-10-21T14:11:35Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23344
dc.sourceIIOimport
dc.titleQuantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorKao, Frank
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.source.peerreviewyes
dc.source.beginpage2128
dc.source.endpage2134
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue7
dc.source.volume60
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6523085&matchBoolean%3Dtrue%26searchField%3DSearch_All%26queryTex
imec.availabilityPublished - imec


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