dc.contributor.author | Alawneh, Isam | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Biesemans, Serge | |
dc.contributor.author | De Meyer, Kristin | |
dc.contributor.author | Claeys, C. | |
dc.date.accessioned | 2021-09-30T11:24:49Z | |
dc.date.available | 2021-09-30T11:24:49Z | |
dc.date.issued | 1998 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/2335 | |
dc.source | IIOimport | |
dc.title | Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K | |
dc.type | Journal article | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.imecauthor | Biesemans, Serge | |
dc.contributor.imecauthor | De Meyer, Kristin | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 3 | |
dc.source.endpage | 3-Aug | |
dc.source.journal | Journal de Physique IV | |
dc.source.volume | 8 | |
imec.availability | Published - open access | |
imec.internalnotes | Proceedings of the 3rd European Workshop on Low Temperature Electronics. 24-26 June 1998; San Miniato, Italy | |