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dc.contributor.authorAlawneh, Isam
dc.contributor.authorSimoen, Eddy
dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-09-30T11:24:49Z
dc.date.available2021-09-30T11:24:49Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2335
dc.sourceIIOimport
dc.titleComparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage3
dc.source.endpage3-Aug
dc.source.journalJournal de Physique IV
dc.source.volume8
imec.availabilityPublished - open access
imec.internalnotesProceedings of the 3rd European Workshop on Low Temperature Electronics. 24-26 June 1998; San Miniato, Italy


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