dc.contributor.author | Wu, Yung-Hsien | |
dc.contributor.author | Wouters, Dirk | |
dc.contributor.author | Hendrickx, Paul | |
dc.contributor.author | Zhang, Leqi | |
dc.contributor.author | Chen, Yangyin | |
dc.contributor.author | Goux, Ludovic | |
dc.contributor.author | Fantini, Andrea | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Jurczak, Gosia | |
dc.date.accessioned | 2021-10-21T14:43:32Z | |
dc.date.available | 2021-10-21T14:43:32Z | |
dc.date.issued | 2013 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/23406 | |
dc.source | IIOimport | |
dc.title | On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure | |
dc.type | Journal article | |
dc.contributor.imecauthor | Hendrickx, Paul | |
dc.contributor.imecauthor | Chen, Yangyin | |
dc.contributor.imecauthor | Goux, Ludovic | |
dc.contributor.imecauthor | Fantini, Andrea | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.imecauthor | Jurczak, Gosia | |
dc.contributor.orcidimec | Goux, Ludovic::0000-0002-1276-2278 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 414 | |
dc.source.endpage | 416 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 3 | |
dc.source.volume | 34 | |
imec.availability | Published - open access | |