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On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure

dc.contributor.authorWu, Yung-Hsien
dc.contributor.authorWouters, Dirk
dc.contributor.authorHendrickx, Paul
dc.contributor.authorZhang, Leqi
dc.contributor.authorChen, Yangyin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-21T14:43:32Z
dc.date.available2021-10-21T14:43:32Z
dc.date.issued2013
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23406
dc.sourceIIOimport
dc.titleOn the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure
dc.typeJournal article
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage414
dc.source.endpage416
dc.source.journalIEEE Electron Device Letters
dc.source.issue3
dc.source.volume34
imec.availabilityPublished - open access


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