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Design and optical characterization of novel InGaN/GaN multiple quantum well structures by metal organic vapor phase epitaxy

dc.contributor.authorZhang, Liyang
dc.contributor.authorLieten, Ruben
dc.contributor.authorLatkowska, M.
dc.contributor.authorBaranowski, M.
dc.contributor.authorKudrawiec, R.
dc.contributor.authorCheng, K.
dc.contributor.authorLiang, Hu
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-21T15:04:55Z
dc.date.available2021-10-21T15:04:55Z
dc.date.issued2013
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23445
dc.sourceIIOimport
dc.titleDesign and optical characterization of novel InGaN/GaN multiple quantum well structures by metal organic vapor phase epitaxy
dc.typeJournal article
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpage08JL10
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume52
dc.identifier.urlhttp://dx.doi.org/10.7567/JJAP.52.08JL10
imec.availabilityPublished - imec


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