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Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition

dc.contributor.authorAmeen, Mahmoud
dc.contributor.authorNyns, Laura
dc.contributor.authorSioncke, Sonja
dc.contributor.authorLin, Dennis
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorConard, Thierry
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorFeteha, M. Y.
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDelabie, Annelies
dc.date.accessioned2021-10-22T00:43:29Z
dc.date.available2021-10-22T00:43:29Z
dc.date.issued2014
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23487
dc.sourceIIOimport
dc.titleAl2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition
dc.typeJournal article
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewyes
dc.source.beginpageN133
dc.source.endpageN144
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue11
dc.source.volume3
dc.identifier.urlhttp://jss.ecsdl.org/content/3/11/N133.abstract
imec.availabilityPublished - imec


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