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Investigation of bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

dc.contributor.authorAndrade, Maria Gloria Cano
dc.contributor.authorMartino, Joao
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T00:43:38Z
dc.date.available2021-10-22T00:43:38Z
dc.date.issued2014
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23492
dc.sourceIIOimport
dc.titleInvestigation of bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage2349
dc.source.endpage2354
dc.source.journalMicroelectronics Reliability
dc.source.issue11
dc.source.volume54
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0026271414001929
imec.availabilityPublished - imec


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