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On the origin of the two-dimensional electron gas at AlGaN/GaN at AlGaN/GaN heterojunctions and its influence on gate-recessed MISHEMTs - A TCAD study

dc.contributor.authorBakeroot, Benoit
dc.contributor.authorYou, Shuzhen
dc.contributor.authorWu, Tian-Li
dc.contributor.authorHu, Jie
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorGeens, Karen
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-22T00:44:32Z
dc.date.available2021-10-22T00:44:32Z
dc.date.issued2014
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23513
dc.sourceIIOimport
dc.titleOn the origin of the two-dimensional electron gas at AlGaN/GaN at AlGaN/GaN heterojunctions and its influence on gate-recessed MISHEMTs - A TCAD study
dc.typeJournal article
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage134506
dc.source.journalJournal of Applied Physics
dc.source.issue13
dc.source.volume116
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/116/13/10.1063/1.4896900
imec.availabilityPublished - imec


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