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Cryogenic etching reduces plasma-induced damage of ultralow-k dielectrics

dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorZhang, Liping
dc.contributor.authorCiofi, Ivan
dc.contributor.authorTokei, Zsolt
dc.date.accessioned2021-10-22T00:44:41Z
dc.date.available2021-10-22T00:44:41Z
dc.date.issued2014
dc.identifier.issn0038-111X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23516
dc.sourceIIOimport
dc.titleCryogenic etching reduces plasma-induced damage of ultralow-k dielectrics
dc.typeJournal article
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorZhang, Liping
dc.contributor.imecauthorCiofi, Ivan
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.orcidimecCiofi, Ivan::0000-0003-1374-4116
dc.source.peerreviewno
dc.source.journalSolid State Technology
dc.source.issue5
dc.source.volume57
dc.identifier.urlhttp://electroiq.com/issue/?id=27550&url=/articles/sst/print/volume-5/issue-57/features/etching/cryogenic-etching-reduces-plasma
imec.availabilityPublished - imec


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