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Kinetics of buffer-related RON-increase in GaN-on-silicon MIS-HEMTs

dc.contributor.authorBisi, Davide
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorMarino, Fabio
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMarcon, Denis
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-22T00:47:11Z
dc.date.available2021-10-22T00:47:11Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23556
dc.sourceIIOimport
dc.titleKinetics of buffer-related RON-increase in GaN-on-silicon MIS-HEMTs
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage1004
dc.source.endpage1006
dc.source.journalIEEE Electron Device Letters
dc.source.issue10
dc.source.volume35
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/abstractKeywords.jsp?reload=true&arnumber=6878414
imec.availabilityPublished - imec


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