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HfO2 based High-k inter-gate dielectrics for planar NAND flash memory

dc.contributor.authorBreuil, Laurent
dc.contributor.authorLisoni, Judit
dc.contributor.authorBlomme, Pieter
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-22T00:49:33Z
dc.date.available2021-10-22T00:49:33Z
dc.date.issued2014
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23583
dc.sourceIIOimport
dc.titleHfO2 based High-k inter-gate dielectrics for planar NAND flash memory
dc.typeJournal article
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage45
dc.source.endpage47
dc.source.journalIEEE Electron Device Letters
dc.source.issue1
dc.source.volume35
dc.identifier.urlhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6678752
imec.availabilityPublished - imec


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